Datasheet > BL30N30

BL30N30

更新时间： 2024-11-21 14:56:03

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
14页	1115K
描述
BL30N30, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching

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BL30N30 数据手册

BL30N30

Power MOSFET

1．Description

BL30N30, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

300

Unit

R_DS(ON).Typ

FEATURES

0.11

Ω

TO-220

TO-220F



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

TO-263

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL30N30-P

BL30N30-A

BL30N30-B

Package

Product Code

30N30

Packing

Tube

TO-220

TO-220F

TO-263

Reel

BL30N30-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL30N30:300V 30A

(2) A:TO-220F P:TO-220 B：TO-263

BL30N30

Rev 1.0

3/2019

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