Datasheet > BL300N10U

BL300N10U

更新时间： 2024-09-25 17:01:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	635K
描述
30A, 100V, N Channel, Power MOSFETs

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中文翻译

获取价格

数据手册

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BL300N10U 数据手册

N-Channel Enhancement MOSFET

BL300N10U

Features



Advanced trench technology

Fast switching

Low gate charge and R_DS(ON)

Low reverse transfer capacitance

HBM: AEC-Q101-001: H1C (JESD22-A114-B: 1C)

Typical Applications



Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: TO-247

Molding Compound: UL Flammability Classification Rating 94V-0

TO-247

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL300N10U

TO-247

30 pcs / Tube

300N10U

Maximum Ratings (@ T_C= 25℃ unless otherwise specified)

Parameter

Symbol

V_DSS

Value

100

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current(T_C= 25°C)

Continuous Drain Current(T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*2

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

136

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

R_θJC

R_θJA

1.5

°C /W

MTM0817A: January 2024 [2.3]

www.gmesemi.com

12 3 4 5

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