Datasheet > BL2N60-S8

BL2N60-S8

更新时间： 2024-04-09 19:00:57

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	529K
描述
2A, 600V, 2W, N Channel,Power MOSFETs

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数据手册

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BL2N60-S8 数据手册

N-Channel Enhancement Mode MOSFET

BL2N60-S8

Features



Super low gate charge

Green device available

Excellent C_dV/ d_teffect decline

Advanced high cell density trench technology

Application



Power switching application

Hard swiched and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: SOP-8

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOP-8

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

BL2N60-S8

4000 pcs / Tape & Reel

2N60

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

600

±30

Gate-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current (T_A= 100°C)

Pulsed Drain Current

1.26

I_DM

Single Pulse Avalanche Energy ^*1

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_A= 25°C)

P_D

R_θJA

T_J

°C /W

°C

Thermal Resistance Junction-to-Air

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0820A: June 2022 [2.0]

www.gmesemi.com

12 3 4 5

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