Datasheet > BL2N60I

BL2N60I

更新时间： 2024-09-19 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
7页	616K
描述
2A, 600V, 2.5W, N Channel,Power MOSFETs

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BL2N60I 数据手册

Product Specification

N-Channel Enhancement Mode MOSFET

BL2N60I/2N60D

FEATURES



R_DS(on)= 3.8Ω@V_GS=10V.

Ultra low gate charge (typical 9.0nC)

Low reverse transfer capacitance (Crss = typical 5.0 pF)

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-251

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

2N60I

BL2N60I

TO-251

TO-252

80pcs / Tube

BL2N60D

80pcs / Tube or 2500pcs / Tape & Reel

2N60D

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

600

Drain current continuous

(T_C=25℃)

2.0

I_D

(T_C=100℃)

1.26

Drain current Pulsed (Note2)

Gate -Source voltage

I_DP

8.0

±30

V_GSS

Avalanche Current (Note2)

Avalanche Energy

I_AR

E_AR

E_AS

2.0

4.5

Repetitive(Note 2)

Avalanche Energy

Single Pulse(Note 3)

140

Peak Diode Recovery dv/dt (Note4)

dv/dt

4.5

V/ns

2.5

Power Dissipation

(T_C=25℃)

P_D

Derate above 25℃

0.36

+150

-55 ~ +150

W/℃

℃

Junction Temperature

Storage Temperature

T_J

T_STG

R_θJA

R_θJC

℃

Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case

℃/W

MTM0306A: December 2022 [1.0]

www.gmesemi.com

12 3 4 5 6 7

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