Datasheet > BL20N65F

BL20N65F

更新时间： 2024-09-25 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	463K
描述
20A, 650V, W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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BL20N65F 数据手册

N-Channel Enhancement Mode MOSFET

BL20N65F

Features



R_DS(ON)= 0.50Ω @ V_GS= 10V

Low leakage current I_DSS= 1 uA (max) @ V_DS= 650V

Enhancement mode

Applications



Switch voltage regulators

Mechanical Data



Case: ITO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

ITO-220AB

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL20N65F

ITO-220AB

50pcs / Tube

20N65F

Maximum Ratings (@ T_J= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

650

±30

Gate-to-Source Voltage

Continuous Drain Current (V_GS=10V, T_C= 25°C)

Pulsed Drain Current

I_DM

Single Pulse Avalanche Energy ^*3

Single Pulse Avalanche Energy ^*4

108

800

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case ^*2

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

0.25

-55 ~ +150

T_STG

°C

MTM0185A: March 2023 [1.0]

www.gmesemi.com

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