Datasheet > BL20N90U

BL20N90U

更新时间： 2024-11-21 17:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	715K
描述
900V, N Channel, HV Planar MOSFETs

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中文翻译

获取价格

数据手册

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BL20N90U 数据手册

N-Channel Enhancement Mode MOSFET

BL20N90U

Features



Fast switching

Low R_DS(ON)

Low gate charge

Advanced high cell density trench technology

Mechanical Data



Case: TO-247

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-247

Ordering Information

Part Number

Package

TO-247

Shipping Quantity

Marking Code

BL20N90U

30 pcs / Tube

20N90U

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

900

±30

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*2

Power Dissipation (T_C= 25°C)

I_D

12.5

I_DM

E_AS

P_D

500

°C

250

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

R_θJC

R_θJA

0.5

°C /W

MTM1335A: August 2023 [1.0]

www.gmesemi.com

12 3 4 5

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