Datasheet > BL2131P-3L

BL2131P-3L

更新时间： 2024-04-09 19:02:33

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	651K
描述
-20V, P Channel MOSFETs

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BL2131P-3L 数据手册

P-Channel Enhancement Mode MOSFET

BL2131P-3L

Features



Advanced trench technology

Low on-resistance

Low gate charge

Low Threshold Voltage

HBM: JESD22-A114-B: 1B

Mechanical Data



Case: SOT-23-3L

Molding Compound: UL Flammability Classification Rating 94V-0

SOT-23-3L

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

SOT-23-3L

Shipping Quantity

Marking Code

BL2131P-3L

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-20

±12

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 70°C) ^*1

Pulsed Drain Current (t_p=10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*4

Power Dissipation (T_A= 25°C) ^*1

Power Dissipation (T_A= 25°C) ^*2

Operating Junction Temperature Range

Storage Temperature Range

-6

I_D

-4.8

I_DM

-60

E_AS

°C

1.5

P_D

0.83

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Air ^*2

R_θJC

°C /W

R_θJA

150

MTM0082A: February 2024 [2.0]

www.gmesemi.com

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