Datasheet > BL1213

BL1213

更新时间： 2024-11-10 17:02:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
7页	1365K
描述
20V, -20V, N+P Channel MOSFETs

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中文翻译

获取价格

数据手册

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BL1213 数据手册

N- AND P-Channel Logic Level Enhancement Mode

BL1213

Features



Low On-Resistance

ESD Protected

High Speed Switching

Low-voltage Drive

Mechanical Data



Case: SOT-363

Molding Compound, UL Flammability Classification Rating 94V-0

SOT-363

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping

Marking Code

BL1213

SOT-363

3000 pcs / Tape & Reel

1213

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Symbol

V_DSS

V_GSS

I_D

Parameter

Tr1

Tr2

-20

Units

Drain-Source Voltage

Gate -Source Voltage

Continuous Drain Current

Pulsed Drain Current

±8

T_A=25 °C, V_GS=4.5V(-4.5V)

T_A=70 °C, V_GS=4.5V(-4.5V)

0.82

0.66

3.4

-0.57

-0.46

-2.3

I_D

(Note1)

I_DM

Thermal Characteristics(@T_A=25℃ unless otherwise specified)

Symbol

Parameter

Tr1

Tr2

Units

P_D

Power Dissipation

T_A=25 °C

T_A=70 °C

0.3

0.18

415

P_D

Power Dissipation

(Note3)

R_θJA

Thermal Resistance, Junction to Ambient Air

Junction Temperature

Storage Temperature Range

℃/W

℃

T_J

-55 to +150

T_STG

℃

Notes:

1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on minimum pad of FR-4 board, t≤5s.

MTM0140A: August 2019

www.gmesemi.com

12 3 4 5 6 7

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