Datasheet > BL10N80

BL10N80

更新时间： 2023-12-06 20:08:12

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
15页	1506K
描述
BL10N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL10N80 数据手册

BL10N80

Power MOSFET

NOTE:

1. Exceeding the maximum ratings of the device in performance may cause damage to the device,

even the permanent failure, which may affect the dependability of the machine. Please do not

exceed the absolute maximum ratings of the device when circuit designing.

2. When installing the heat sink, please pay attention to the torsional moment and the smoothness

of the heat sink.

3. MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the

device from being damaged by the static electricity when using it.

4. Shanghai Belling reserves the right to make changes in this specification sheet and is subject to

change without prior notice.

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传真：010-8835 9236

BL10N80

Rev 1.0

6/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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