Datasheet > BL095N10TI

BL095N10TI

更新时间： 2024-04-09 19:01:28

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	559K
描述
63A, 100V, 69W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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BL095N10TI 数据手册

N-Channel Enhancement Mode MOSFET

BL095N10TI

Features



Low R_DS(ON)& FOM

Extremely low switching loss

Excellent stability and uniformity

Mechanical Data



Case: TO-251

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-251

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

095N10TI

BL095N10TI

TO-251

80 pcs / Tube

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current ^*3

I_D

I_DM

E_AS

252

Single Pulse Avalanche Energy ^{*3, 6}

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*2

P_D

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Air ^{*1, 4}

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

1.8

-55 ~ +150

T_STG

°C

MTM1160A: March 2023 [1.1]

www.gmesemi.com

12 3 4 5

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