Datasheet > BL098N10THF

BL098N10THF

更新时间： 2024-09-24 17:02:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	474K
描述
39A, 100V, 29W, N Channel, Power MOSFETs

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数据手册

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BL098N10THF 数据手册

N-Channel Enhancement Mode MOSFET

BL098N10THF

Features



High speed power switching

Enhanced body diode dv/dt capability

Enhanced avalanche ruggedness

Mechanical Data



Case: ITO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

ITO-220AB

Ordering Information

Part Number

Package

ITO-220AB

Shipping Quantity

Marking Code

098N10THF

BL098N10THF

50 pcs / Tube

Maximum Ratings (@ T_J= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current

I_D

I_DM

156

Single Pulse Avalanche Energy ^*2

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

4.3

-55 ~ +150

T_STG

°C

MTM1245A: June 2023 [1.0]

www.gmesemi.com

12 3 4 5

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