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BGU8L1

更新时间: 2024-03-03 10:10:47
品牌 Logo 应用领域
恩智浦 - NXP LTE
页数 文件大小 规格书
11页 100K
描述
SiGe:C Low Noise Amplifier MMIC for LTE

BGU8L1 数据手册

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BGU8L1  
NXP Semiconductors  
SiGe:C low-noise amplifier MMIC for LTE  
11. Characteristics  
Table 7.  
Characteristics at VCC = 1.8 V  
728 MHz f 960 MHz; VCC = 1.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 15 nH inductor;  
unless otherwise specified.  
Symbol Parameter  
Conditions  
VI(ENABLE) 0.8 V  
VI(ENABLE) 0.3 V  
f = 740 MHz  
f = 882 MHz  
f = 943 MHz  
f = 740 MHz  
f = 882 MHz  
f = 943 MHz  
f = 740 MHz  
f = 882 MHz  
f = 943 MHz  
f = 740 MHz  
f = 882 MHz  
f = 943 MHz  
f = 740 MHz  
f = 882 MHz  
f = 943 MHz  
f = 740 MHz  
f = 882 MHz  
f = 943 MHz  
Min  
Typ  
4.2  
-
Max Unit  
6.2 mA  
1.0 A  
ICC  
supply current  
2.2  
-
-
[1]  
[2]  
Gp  
power gain  
14.5  
-
dB  
12.5 14.5 16.5 dB  
[3]  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14.0  
9.0  
-
-
-
-
-
-
-
-
-
-
-
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
[1]  
RLin  
RLout  
ISL  
input return loss  
output return loss  
isolation  
[2]  
13.0  
11.0  
12.0  
20.0  
20.0  
25.0  
25.0  
26.0  
0.7  
[3]  
[1]  
[2]  
[3]  
[1]  
[2]  
[3]  
[1][4]  
[2][4][5]  
[3][4]  
[1]  
NF  
noise figure  
0.7  
1.3 dB  
0.8  
-
-
dB  
Pi(1dB)  
input power at 1 dB  
gain compression  
11.0  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
-
[2][5]  
[3]  
14.0 10.0 -  
-
-
9.0  
5.0  
-
[1]  
IP3i  
input third-order intercept point f = 740 MHz  
f = 882 MHz  
-
[2][5]  
[3]  
8.0 3.0  
-
f = 943 MHz  
-
2.0  
-
K
Rollett stability factor  
1
-
-
-
-
-
ton  
toff  
turn-on time  
turn-off time  
time from VI(ENABLE) ON to 90 % of the gain  
time from VI(ENABLE) OFF to 10 % of the gain  
4
1
s  
-
s  
[1] E-UTRA operating band 17 (734 MHz to 746 MHz).  
[2] E-UTRA operating band 5 (869 MHz to 894 MHz).  
[3] E-UTRA operating band 8 (925 MHz to 960 MHz).  
[4] PCB losses are subtracted.  
[5] Guaranteed by device design; not tested in production.  
BGU8L1  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2017. All rights reserved.  
Product data sheet  
Rev. 3 — 16 January 2017  
5 of 11  

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