BGU8L1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
11. Characteristics
Table 7.
Characteristics at VCC = 1.8 V
728 MHz f 960 MHz; VCC = 1.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 15 nH inductor;
unless otherwise specified.
Symbol Parameter
Conditions
VI(ENABLE) 0.8 V
VI(ENABLE) 0.3 V
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
f = 740 MHz
f = 882 MHz
f = 943 MHz
Min
Typ
4.2
-
Max Unit
6.2 mA
1.0 A
ICC
supply current
2.2
-
-
[1]
[2]
Gp
power gain
14.5
-
dB
12.5 14.5 16.5 dB
[3]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14.0
9.0
-
-
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
[1]
RLin
RLout
ISL
input return loss
output return loss
isolation
[2]
13.0
11.0
12.0
20.0
20.0
25.0
25.0
26.0
0.7
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[1][4]
[2][4][5]
[3][4]
[1]
NF
noise figure
0.7
1.3 dB
0.8
-
-
dB
Pi(1dB)
input power at 1 dB
gain compression
11.0
dBm
dBm
dBm
dBm
dBm
dBm
-
[2][5]
[3]
14.0 10.0 -
-
-
9.0
5.0
-
[1]
IP3i
input third-order intercept point f = 740 MHz
f = 882 MHz
-
[2][5]
[3]
8.0 3.0
-
f = 943 MHz
-
2.0
-
K
Rollett stability factor
1
-
-
-
-
-
ton
toff
turn-on time
turn-off time
time from VI(ENABLE) ON to 90 % of the gain
time from VI(ENABLE) OFF to 10 % of the gain
4
1
s
-
s
[1] E-UTRA operating band 17 (734 MHz to 746 MHz).
[2] E-UTRA operating band 5 (869 MHz to 894 MHz).
[3] E-UTRA operating band 8 (925 MHz to 960 MHz).
[4] PCB losses are subtracted.
[5] Guaranteed by device design; not tested in production.
BGU8L1
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet
Rev. 3 — 16 January 2017
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