Datasheet > BGSA143ML10E6327XTSA1

BGSA143ML10E6327XTSA1

更新时间： 2024-02-20 01:09:05

品牌	Logo	应用领域
英飞凌 - INFINEON		电信电信集成电路
页数	文件大小	规格书
2页	380K
描述
Telecom Circuit,

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BGSA143ML10E6327XTSA1 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	12 weeks	风险等级：	1.44
Is Samacsys：	N	电信集成电路类型：	TELECOM CIRCUIT
Base Number Matches：	1

BGSA143ML10E6327XTSA1 数据手册

SP002262602

BGSA143ML10

Low Resistance Antenna Tuning Switch

Features



Designed for high-linearity antenna tuning switching

and RF tuning applications



Ultra low R_ONresistance of 1.15 Ω at each port in ON state

Low C_OFFcapacitance of 140 fF at each port in OFF state

Each Switch chain directly controlled, R_ONreducable down to 0.3 Ω

High RF operating peak voltage handling of 42 V in OFF state

Low harmonic generation

MIPI RFFE control interface

External USID_sel pin enabling 4 default USID address

No RF parameter change within supply voltage range

Small form factor 1.1 x 1.5 mm²(MSL1, 260°C per JEDEC J-STD-020)

RoHS and WEEE compliant package

Description

BGSA143ML10 is a versatile Single-Pole Quad Throw (SP4T) RF antenna tuning switch featuring open or short

reflective ports, being optimized for tuning applications up to 6.0 GHz. Including a RFFE digital control

interface, this switch offers the possibility to adopt a SP4T, SP3T, SPDT along with SPST topology for a better

flexibility in RF Front-End designs.

BGSA143ML10 includes 4 ultra-low R_ONseries ports and 4 individually switchable shunt switches to enable open

reflective and short-reflective behavior. As a result any type of antenna tuning switching or tuner circuits can be

realized. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL

compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch

maximum input power level, resulting in linear performance at all signal levels and external DC blocking

capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage

ruggedness, it is suited for switching any reactive devices such as inductors and capacitors in RF matching

circuits without significant losses in quality factors.

Datasheet Summary

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 2

Revision 1.0

2018-11-15

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