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BGSA143ML10E6327XTSA1 PDF预览

BGSA143ML10E6327XTSA1

更新时间： 2024-11-05 15:45:43
品牌 Logo 应用领域
英飞凌 - INFINEON 电信电信集成电路
页数 文件大小 规格书
2页 380K
描述
Telecom Circuit,

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BGSA143ML10E6327XTSA1 技术参数

生命周期：ActiveReach Compliance Code：compliant
Factory Lead Time：12 weeks风险等级：1.44
Is Samacsys：N电信集成电路类型：TELECOM CIRCUIT
Base Number Matches：1

BGSA143ML10E6327XTSA1 数据手册

 浏览型号BGSA143ML10E6327XTSA1的Datasheet PDF文件第2页 
SP002262602  
BGSA143ML10  
Low Resistance Antenna Tuning Switch  
Features  
Designed for high-linearity antenna tuning switching  
and RF tuning applications  
Ultra low RON resistance of 1.15 Ω at each port in ON state  
Low COFF capacitance of 140 fF at each port in OFF state  
Each Switch chain directly controlled, RON reducable down to 0.3 Ω  
High RF operating peak voltage handling of 42 V in OFF state  
Low harmonic generation  
MIPI RFFE control interface  
External USID_sel pin enabling 4 default USID address  
No RF parameter change within supply voltage range  
Small form factor 1.1 x 1.5 mm2 (MSL1, 260°C per JEDEC J-STD-020)  
RoHS and WEEE compliant package  
Description  
BGSA143ML10 is a versatile Single-Pole Quad Throw (SP4T) RF antenna tuning switch featuring open or short  
reflective ports, being optimized for tuning applications up to 6.0 GHz. Including a RFFE digital control  
interface, this switch offers the possibility to adopt a SP4T, SP3T, SPDT along with SPST topology for a better  
flexibility in RF Front-End designs.  
BGSA143ML10 includes 4 ultra-low RON series ports and 4 individually switchable shunt switches to enable open  
reflective and short-reflective behavior. As a result any type of antenna tuning switching or tuner circuits can be  
realized. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL  
compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch  
maximum input power level, resulting in linear performance at all signal levels and external DC blocking  
capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage  
ruggedness, it is suited for switching any reactive devices such as inductors and capacitors in RF matching  
circuits without significant losses in quality factors.  
Datasheet Summary  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 2  
Revision 1.0  
2018-11-15  
12

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