Datasheet > BGD804_15

BGD804_15

更新时间： 2024-01-07 11:49:46

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
12页	67K
描述
860 MHz, 20 dB gain power doubler amplifier

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BGD804_15 数据手册

Philips Semiconductors

Product speciﬁcation

860 MHz, 20 dB gain power doubler ampliﬁer

BGD804

FEATURES

PINNING - SOT115J

PIN CONFIGURATION

• Excellent linearity

DESCRIPTION

• Extremely low noise

• Silicon nitride passivation

• Rugged construction

lfpage

input

common

+V_B

• Gold metallization ensures

excellent reliability.

Side view

MSA319

common

output

Fig.1 Simplified outline.

APPLICATIONS

CATV systems in the 40 to 860 MHz

frequency range.

DESCRIPTION

Hybrid amplifier module in a

SOT115J package operating at a

voltage supply of 24 V (DC).

QUICK REFERENCE DATA

SYMBOL

PARAMETER

power gain

CONDITIONS

MIN.

19.5

MAX.

UNIT

G_p

f = 50 MHz

f = 860 MHz

V_B= 24 V

20.5

−

I_tot

total current consumption (DC)

−

410

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

V_i

RF input voltage

−

dBmV

°C

T_stg

T_mb

V_B

storage temperature

−40

−20

−

+100

operating mounting base temperature

supply voltage

°C

2001 Nov 01

123 4 5 6 7...12

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