生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
配置: | SINGLE | 最小漏源击穿电压: | 25 V |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 1.5 pF |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.225 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFR30LT1 | ONSEMI |
获取价格 |
JFET Amplifiers(N-Channel) | |
BFR30LT1 | MOTOROLA |
获取价格 |
JFET Amplifiers(N-Channel) | |
BFR30LT1/D | ETC |
获取价格 |
JFET Amplifier | |
BFR30LT1G | ROCHESTER |
获取价格 |
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, LEAD FREE, CASE 318-08, 3 PIN | |
BFR30LT1G | ONSEMI |
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JFET Amplifiers(N-Channel) | |
BFR30LT3 | MOTOROLA |
获取价格 |
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
BFR30LT3 | ONSEMI |
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TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN, FET Gene | |
BFR30R | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR30R-STYLE-A | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR30R-STYLE-B | ALLEGRO |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |