生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.16 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 25 V | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 1.5 pF | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.225 W | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BFR30,215 | NXP |
功能相似 |
N-channel FET TO-236 3-Pin | |
BFR30LT1G | ONSEMI |
功能相似 |
JFET Amplifiers(N-Channel) | |
BFR30LT1 | ONSEMI |
功能相似 |
JFET Amplifiers(N-Channel) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFR30LT1/D | ETC |
获取价格 |
JFET Amplifier | |
BFR30LT1G | ROCHESTER |
获取价格 |
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, LEAD FREE, CASE 318-08, 3 PIN | |
BFR30LT1G | ONSEMI |
获取价格 |
JFET Amplifiers(N-Channel) | |
BFR30LT3 | MOTOROLA |
获取价格 |
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
BFR30LT3 | ONSEMI |
获取价格 |
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN, FET Gene | |
BFR30R | ALLEGRO |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR30R-STYLE-A | ALLEGRO |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR30R-STYLE-B | ALLEGRO |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR30R-STYLE-C | ALLEGRO |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
BFR30R-STYLE-D | ALLEGRO |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |