Datasheet > BF821-Q

BF821-Q

更新时间： 2024-03-03 10:11:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	175K
描述
PNP high voltage transistorProduction

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BF821-Q 数据手册

Nexperia

BF821-Q

PNP high voltage transistor

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BF821-Q

SOT23

plastic, surface-mounted package; 3 terminals; 1.9 mm

pitch; 2.9 mm x 1.3 mm x 1 mm body

SOT23

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

1W%

BF821-Q

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-300

-5

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

-50

°C

I_CM

peak collector current

peak base current

-100

-50

I_BM

P_tot

total power dissipation

junction temperature

ambient temperature

storage temperature

T_amb≤ 25 °C

[1]

250

150

T_j

T_amb

T_stg

-65

°C

[1] Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-a)

thermal resistance from

junction to ambient

[1]

500

K/W

[1] Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².

BF821-Q

All information provided in this document is subject to legal disclaimers.

Product data sheet

7 June 2023

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