Datasheet > BF822

BF822

更新时间： 2023-12-06 20:08:17

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	518K
描述
SOT-23

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中文翻译

获取价格

数据手册

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BF822 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

BF820/BF822

TRANSISTOR (NPN)

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Low current (max.50 mA)

High voltage (max.300V)

Telephony and professional communication equipment.

MARKING: BF820:1V, BF822: 1X

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

BF820

BF822

BF820

BF822

300

250

300

250

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

P_C

0.25

-55-150

T_J,T_stg

Operation Junction and Storage Temperature Range

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

300

250

I_C=100μA, I_E=0

BF820

BF822

Collector-base breakdown voltage

V_(BR)CBO

I_C=1mA, I_B=0

BF820

BF822

300

250

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_E= 100μA, I_C=0

V_CB=200V,I_E=0

V_EB= 5V,I_C=0

0.01

0.05

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= 20V,I_C=25mA

I_C=30mA,I_B= 5mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

0.6

1.6

MHz

f_T

V_CE=10V, I_C= 10mA,f=100MHz

V_CB=30V,I_E=0,f=1MHz

Collector output capacitance

C_ob

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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