Datasheet > BF543

BF543

更新时间： 2024-01-05 02:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	158K
描述
N-Channel MOS-Fieldeffect Triode, Depletion Mode

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技术参数
数据手册

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BF543 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.72	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.03 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	VERY HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	Base Number Matches：	1

BF543 数据手册

BF543

Vishay Semiconductors

N-Channel MOS-Fieldeffect Triode, Depletion Mode

Features

• Integrated gate protection diode

• Low feedback capacitance

• Low noise figure

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

19240

Electrostatic sensitive device.

Applications

High frequency stages up to 300 MHz.

Observe precautions for handling.

Mechanical Data

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Pinning: 1 = Source, 2 = Gate, 3 = Drain

Parts Table

Part

Marking

Package

BF543

SOT-23

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_DS

Value

Unit

Drain - source voltage

Drain current

I_D

°C

Gate - source peak current

Total power dissipation

Channel temperature

Storage temperature range

I_GSM

P_tot

T_Ch

T_stg

T_amb≤ 60 °C

200

150

-55 to +150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thChA

Value

450

Unit

Channel ambient

K/W

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35µm Cu

Document Number 85072

Rev. 1.5, 05-Jul-05

www.vishay.com

12 3

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