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BF543E6433 PDF预览

BF543E6433

更新时间: 2024-01-03 15:50:20
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
5页 113K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

BF543E6433 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.29
配置:SINGLE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.03 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

BF543E6433 数据手册

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