Datasheet > BF545AT/R

BF545AT/R

更新时间： 2024-01-08 11:13:05

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	122K
描述
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal

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BF545AT/R 数据手册

BF545A; BF545B; BF545C

T23

N-channel silicon junction field-effect transistors

Rev. 4 — 15 September 2011

Product data sheet

1. Product profile

1.1 General description

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Low leakage level (typ. 500 fA)

 High gain

 Low cut-off voltage (max. 2.2 V for BF545A).

1.3 Applications

 Impedance converters in e.g. electret microphones and infra-red detectors

 VHF amplifiers in oscillators and mixers.

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

30

Unit

V_DS

drain-source voltage

V_GSoff

gate-source cut-off

voltage

I_D= 1 A; V_DS= 15 V

0.4

7.8

I_DSS

drain current

V_GS= 0 V; V_DS= 15 V

BF545A

6.5

BF545B

BF545C

P_tot

total power dissipation T_amb 25 C

250

6.5

y_fs

forward transfer

admittance

V_GS= 0 V; V_DS= 15 V

12 3 4 5 6 7...16

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