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BF545CT/R PDF预览

BF545CT/R

更新时间: 2024-02-04 01:21:23
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
16页 122K
描述
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal

BF545CT/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.16
配置:SINGLE最小漏源击穿电压:30 V
FET 技术:JUNCTION最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BF545CT/R 数据手册

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BF545A; BF545B; BF545C  
T23  
SO  
N-channel silicon junction field-effect transistors  
Rev. 4 — 15 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
Low leakage level (typ. 500 fA)  
High gain  
Low cut-off voltage (max. 2.2 V for BF545A).  
1.3 Applications  
Impedance converters in e.g. electret microphones and infra-red detectors  
VHF amplifiers in oscillators and mixers.  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
-
Typ  
Max  
30  
Unit  
V
VDS  
drain-source voltage  
-
-
VGSoff  
gate-source cut-off  
voltage  
ID = 1 A; VDS = 15 V  
0.4  
7.8  
V
IDSS  
drain current  
VGS = 0 V; VDS = 15 V  
BF545A  
2
-
-
-
-
-
6.5  
15  
mA  
mA  
mA  
mW  
mS  
BF545B  
6
BF545C  
12  
-
25  
Ptot  
total power dissipation Tamb 25 C  
250  
6.5  
yfs  
forward transfer  
admittance  
VGS = 0 V; VDS = 15 V  
3

BF545CT/R 替代型号

型号 品牌 替代类型 描述 数据表
BF545C,215 NXP

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