Datasheet > BF550

BF550

更新时间： 2024-10-01 06:41:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	36K
描述
PNP Medium Frequency Transistor

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中文翻译

获取价格

数据手册

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BF550 数据手册

SMD Type

TransistIoCrs

PNP Medium Frequency Transistor

BF550

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low current (max. 25 mA).

Low voltage (max. 40 V).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

-40

-4

-25

Peak collector current

I^CM

-25

Total power dissipation

Storage temperature

Junction temperature

P^tot

250

T^stg

-65 to +150

150

Operating ambient temperature

Ramb

Rth j-a

-65 to +150

500

Thermal resistance from junction to ambient *

* Transistor mounted on an FR4 printed-circuit board.

K/W

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

I^EBO

h^FE

Testconditons

Min

Typ

Max

-50

Unit

IE = 0; VcB = -30 V

Ic = 0; VEB = -3 V

-100

Ic = -1 mA; VcE = -10 V

Ic = -1 mA; VcB = -10 V; f = 1 MHz

IC = -1 mA; VCE = -10 V; f = 100 MHz

Base to emitter voltage

Feedback capacitance

Transition frequency

V^BE

C^re

750

0.5

f^T

325

MHz

Marking

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