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BF543E6327 PDF预览

BF543E6327

更新时间: 2024-09-28 21:04:35
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
5页 113K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

BF543E6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.28
配置:SINGLE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.03 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BF543E6327 数据手册

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