Datasheet > BF422

BF422

更新时间： 2024-11-24 08:52:19

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	220K
描述
NPN Silicon Plastic-Encapsulate Transistor

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中文翻译

获取价格

数据手册

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BF422 数据手册

M C C

BF420

BF422

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN Silicon

Plastic-Encapsulate

Transistor

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Capable of 0.83Watts of Power Dissipation.

Collector-current 0.1A

•

Collector-base Voltage: BF420 300V

BF422 250V

•

Operating and storage junction temperature range: -55^OC to +150^OC

TO-92

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking: Type Number

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage

(I =1.0mAdc, I_B=0) BF420

BF422

Collector-Base Breakdown Voltage

300

250

---

Vdc

(I =100uAdc, I_E=0)

BF420

300

250

5.0

---

Vdc

Adc

BF422

Emitter-Base Breakdown Voltage

(I =100uAdc, I_C=0)

Collector Cutoff Current

(V_CB=200Vdc, I_E=0)

Emitter Cutoff Current

---

0.01

0.05

uAdc

CBO

I_EBO

(V_EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h_FE

DC Current Gain

---

0.6

---

Vdc

MHz

(I =25mAdc,V _CE=20Vdc)

V_CE(sat)

Collector-Emitter Saturation Voltage

(I =30mAdc, I_B=5.0mAdc)

Transition Frequency

(V_CE=10Vdc, I =10mA dc, f=100MHz)

DIMENSIONS

INCHES

DIM

MIN

.170

.550

.010

.130

.096

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

www.mccsemi.com

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Revision: A

2011/01/01

中文翻译

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