Datasheet > BF422-A

BF422-A

更新时间： 2024-11-21 20:10:11

品牌	Logo	应用领域
美微科 - MCC		晶体管
页数	文件大小	规格书
2页	64K
描述
Transistor

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中文翻译

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技术参数
数据手册

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BF422-A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.89	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BF422-A 数据手册

M C C

BF420

BF422

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20736 Marilla Street Chatsworth

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$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN Silicon

Plastic-Encapsulate

Transistor

•

Capable of 0.83Watts of Power Dissipation.

Collector-current 0.1A

Collector-base Voltage: BF420 300V

BF422 250V

•

Operating and storage junction temperature range: -55^OC to +150^OC

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

TO-92

Marking: Type Number

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage

(I =1.0mAdc, I_B=0) BF420

BF422

Collector-Base Breakdown Voltage

300

250

---

Vdc

(I =100uAdc, I_E=0)

BF420

300

250

5.0

---

Vdc

Adc

BF422

Emitter-Base Breakdown Voltage

(I =100uAdc, I_C=0)

Collector Cutoff Current

(V_CB=200Vdc, I_E=0)

Emitter Cutoff Current

---

0.01

0.05

uAdc

CBO

I_EBO

(V_EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h_FE

DC Current Gain

---

0.6

---

Vdc

MHz

(I =25mAdc,V _CE=20Vdc)

V_CE(sat)

Collector-Emitter Saturation Voltage

(I =30mAdc, I_B=5.0mAdc)

Transition Frequency

(V_CE=10Vdc, I =10mA dc, f=100MHz)

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

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Revision: 4

2006/05/26

中文翻译

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