5秒后页面跳转
BF422 PDF预览

BF422

更新时间: 2024-11-24 08:52:19
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
4页 208K
描述
High voltage application

BF422 数据手册

 浏览型号BF422的Datasheet PDF文件第2页浏览型号BF422的Datasheet PDF文件第3页浏览型号BF422的Datasheet PDF文件第4页 
BF422  
NPN Silicon Transistor  
Descriptions  
High voltage application  
Monitor equipment application  
PIN Connection  
C
E
Features  
Collector-Emitter voltage : VCEO=250V  
Complementary pair with BF423  
B
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
BF422  
BF422  
TO-92  
Absolute maximum ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
250  
Unit  
V
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-base  
250  
V
5
V
Collector current  
100  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
625  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
Symbol  
BVCEO  
ICBO  
Test Condition  
IC=1mA, IB=0  
Min. Typ. Max. Unit  
Collector-Emitter breakdown voltage  
Collector cut-off current  
250  
-
-
-
-
-
-
V
nA  
nA  
-
VCB=200V, IE=0  
VEB=5V, IC=0  
-
-
100  
100  
-
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
VCE=20V, IC=25mA  
IC=30mA, IB=5mA  
50  
-
Collector-Emitter saturation voltage  
VCE(sat)  
0.6  
V
VCE=20V, IC=10mA,  
f=100MHz  
Transistor frequency  
fT  
-
-
100  
1
-
-
MHz  
pF  
Collector output capacitance  
Cob  
VCB=20V, IE=0, f=1MHz  
KSD-T0A035-000  
1

与BF422相关器件

型号 品牌 获取价格 描述 数据表
BF422(BPL) CDIL

获取价格

暂无描述
BF422_05 KEC

获取价格

TO-92 PACKAGE
BF422_10 ONSEMI

获取价格

High Voltage Transistors
BF422_15 UTC

获取价格

HIGH VOLTAGE TRANSISTOR
BF422-A DIODES

获取价格

Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BF422-A MCC

获取价格

Transistor
BF422A3 CYSTEKEC

获取价格

NPN Epitaxial Planar Transistor
BF422-AP-HF MCC

获取价格

Small Signal Bipolar Transistor,
BF422-BP MCC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BF422BPL CDIL

获取价格

NPN SILICON PLANAR EPITAXIAL TRANSISTOR