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BF421

更新时间: 2024-11-23 22:27:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 123K
描述
High Voltage Transistors(PNP)

BF421 数据手册

 浏览型号BF421的Datasheet PDF文件第2页浏览型号BF421的Datasheet PDF文件第3页浏览型号BF421的Datasheet PDF文件第4页 
Order this document  
by BF421/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
2
3
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
Rating  
Symbol  
BF421  
–300  
BF423  
–250  
Unit  
Vdc  
CASE 29–04, STYLE 14  
TO–92 (TO–226AA)  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
–300  
–250  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation  
P
625  
5.0  
mW  
mW/°C  
D
D
@ T = 25°C  
A
Derate above 25°C  
Total Device Dissipation  
P
1.5  
12  
Watts  
mW/°C  
@ T = 25°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
200  
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = –1.0 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
BF421  
BF423  
–300  
–250  
C
B
CollectorBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
V
Vdc  
Vdc  
(BR)CBO  
BF421  
BF423  
–300  
–250  
C
E
EmitterBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
V
(BR)EBO  
BF421  
BF423  
–5.0  
–5.0  
E
C
Collector Cutoff Current  
(V = –200 Vdc, I = 0)  
I
Adc  
CBO  
BF421  
BF423  
–0.01  
CB  
E
Emitter Cutoff Current  
(V = –5.0 Vdc, I = 0)  
I
nAdc  
EBO  
BF421  
BF423  
–100  
EB  
C
1. Pulse Test: Pulse Width  
300 s; Duty Cycle  
2.0%.  
Motorola, Inc. 1996

BF421 替代型号

型号 品牌 替代类型 描述 数据表
BF421,112 NXP

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