Datasheet > BF421/D

BF421/D

更新时间： 2024-11-23 23:35:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管高压
页数	文件大小	规格书
4页	56K
描述
High Voltage Transistor PNP

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BF421/D 数据手册

ON Semiconductort

BF421

BF423

High Voltage Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BF421

–300

BF423

–250

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

–300

–250

Vdc

–5.0

Vdc

Collector Current — Continuous

Total Device Dissipation

–500

mAdc

625

5.0

mW/°C

CASE 29–11, STYLE 14

TO–92 (TO–226AA)

@ T = 25°C

Derate above 25°C

Total Device Dissipation

1.5

Watts

mW/°C

@ T = 25°C

Derate above 25°C

COLLECTOR

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

BASE

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = –1.0 mAdc, I = 0)

BF421

BF423

–300

–250

—

Collector–Base Breakdown Voltage

(I = –100 mAdc, I = 0)

Vdc

BF421

BF423

–300

–250

—

Emitter–Base Breakdown Voltage

(I = –100 mAdc, I = 0)

BF421

BF423

–5.0

—

Collector Cutoff Current

(V = –200 Vdc, I = 0)

mAdc

nAdc

CBO

BF421

BF423

—

–0.01

—

Emitter Cutoff Current

(V = –5.0 Vdc, I = 0)

EBO

BF421

BF423

—

–100

—

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 2

BF421/D

12 3 4

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