BF421-AP-HF

更新时间： 2024-11-27 13:02:15

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	216K
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中文翻译

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数据手册

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BF421-AP-HF 数据手册

M C C

BF421

BF423

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

PNP Silicon

Plastic-Encapsulate

Transistor

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Capable of 0.83Watts of Power Dissipation.

Collector-current 0.1A

•

Collector-base Voltage: BF421 300V

BF423 250V

•

Operating and storage junction temperature range: -55^OC to +150^OC

TO-92

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking: Type Number

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V _(BR)CEO

Collector-Emitter Breakdown Voltage

(I =1.0mAdc, I_B=0)

BF421

BF423

300

250

---

Vdc

V_(BR)CBO

Collector-Base Breakdown Voltage

(I _C=100uAdc, I_E=0)

BF421

BF423

300

250

5.0

---

Vdc

Adc

V_(BR)EBO

I_CBO

Emitter-Base Breakdown Voltage

(I _E=100uAdc, I_C=0)

Collector Cutoff Current

(V _CB=200Vdc, I_E=0)

Emitter Cutoff Current

---

0.01

0.05

uAdc

I_EBO

(V _EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h _FE

DC Current Gain

---

0.6

---

Vdc

MHz

(I =25mAdc,V _CE=20Vdc)

V _CE(sat)

Collector-Emitter Saturation Voltage

(I =30mAdc, I_B=5.0mAdc)

Transition Frequency

(V_CE=10Vdc, I =10mA dc, f=100MHz)

DIMENSIONS

INCHES

DIM

MIN

MAX

.190

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.170

.550

.010

.130

.096

.190

.590

.020

.160

.104

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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BF421RLRB	MOTOROLA	获取价格	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92