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BF256B PDF预览

BF256B

更新时间: 2024-11-14 22:39:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 射频放大器
页数 文件大小 规格书
3页 26K
描述
N-Channel RF Amplifiers

BF256B 数据手册

 浏览型号BF256B的Datasheet PDF文件第2页浏览型号BF256B的Datasheet PDF文件第3页 
BF256A/BF256B/BF256C  
N-Channel RF Amplifiers  
This device is designed for VHF/UHF amplifiers.  
Sourced from process 50.  
TO-92  
1
1. Gate 2. Source 3. Drain  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
Units  
V
V
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
DG  
-30  
V
GS  
I
10  
mA  
GF  
P
Total Device Dissipation @T =25°C  
350  
mW  
D
A
Derate above 25°C  
2.8  
mW/°C  
°C  
T
Operating and storage Temperature Range  
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Gate-Source Breakdown Voltage  
Gate-Source  
V
V
V
V
= 0, I = 1µA  
-30  
-0.5  
-0.5  
V
V
(BR)GSS  
GS  
DS  
DS  
DS  
GS  
G
= 15V, I = 200µA  
-7.5  
-8  
D
(off)  
Gate-Source Cutoff Voltage  
Gate Reverse Current  
= 15V, I = 10nA  
V
GS  
D
I
= -20V, V = 0  
-5  
nA  
GSS  
GS  
On Characteristics  
I
Zero-Gate Voltage Drain Current  
DSS  
BF256A  
BF256B  
BF256C  
V
V
= 15V, V = 0  
3
6
11  
7
13  
18  
mA  
GS  
DS  
GS  
Small Signal Characteristics  
gfs  
Common Source Forward Transconductance  
= 15V, V = 0, f = 1KHz  
4.5  
mmhos  
GS  
©2003 Fairchild Semiconductor Corporation  
Rev. A, June 2003  

BF256B 替代型号

型号 品牌 替代类型 描述 数据表
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