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BF245ARL1 PDF预览

BF245ARL1

更新时间: 2024-10-04 21:01:11
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
5页 252K
描述
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

BF245ARL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.77其他特性:EUROPEAN PART NUMBER
配置:SINGLE最小漏源击穿电压:30 V
最大漏极电流 (ID):0.1 AFET 技术:JUNCTION
最高频带:ULTRA HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BF245ARL1 数据手册

 浏览型号BF245ARL1的Datasheet PDF文件第2页浏览型号BF245ARL1的Datasheet PDF文件第3页浏览型号BF245ARL1的Datasheet PDF文件第4页浏览型号BF245ARL1的Datasheet PDF文件第5页 
ON Semiconductort  
BF245A  
BF245B  
JFET VHF/UHF Amplifiers  
N–Channel — Depletion  
MAXIMUM RATINGS  
Rating  
Drain–Source Voltage  
Symbol  
Value  
±30  
30  
Unit  
Vdc  
V
DS  
DG  
GS  
Drain–Gate Voltage  
Gate–Source Voltage  
Drain Current  
V
V
Vdc  
1
2
3
30  
Vdc  
BF244A, BF244B  
CASE 29–11, STYLE 22  
TO–92 (TO–226AA)  
I
D
100  
10  
mAdc  
mAdc  
Forward Gate Current  
I
G(f)  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Storage Channel Temperature Range  
T
stg  
–65 to +150  
°C  
3 DRAIN  
3 DRAIN  
1
2
3
BF245, BF245A,  
BF245B, BF245C  
CASE 29–11, STYLE 23  
TO–92 (TO–226AA)  
2
1
GATE  
GATE  
STYLE 22  
STYLE 23  
1 SOURCE  
2 SOURCE  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Gate–Source Breakdown Voltage  
V
30  
Vdc  
Vdc  
(BR)GSS  
(I = 1.0 µAdc, V = 0)  
G
DS  
Gate–Source  
V
GS  
(1)  
(V = 15 Vdc, I = 200 µAdc)  
BF245  
0.4  
0.4  
1.6  
3.2  
7.5  
2.2  
3.8  
7.5  
DS  
D
(2)  
BF245A, BF244A  
BF245B, BF244B  
BF245C  
Gate–Source Cutoff Voltage  
(V = 15 Vdc, I = 10 nAdc)  
V
GS(off)  
ā0.5  
ā8.0  
Vdc  
DS  
D
Gate Reverse Current  
(V = 20 Vdc, V = 0)  
I
5.0  
nAdc  
GSS  
GS  
DS  
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current  
I
mAdc  
DSS  
(1)  
(V = 15 Vdc, V = 0)  
BF245  
2.0  
2.0  
6.0  
12  
25  
6.5  
15  
25  
DS  
GS  
(2)  
BF245A, BF244A  
BF245B, BF244B  
BF245C  
1. On orders against the BF245, any or all subgroups might be shipped.  
2. On orders against the BF244A, any or all subgroups might be shipped.  
Semiconductor Components Industries, LLC, 2001  
332  
Publication Order Number:  
June, 2001 – Rev. 0  
BF245A/D  

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