Datasheet > BF245ARLRE

BF245ARLRE

更新时间： 2024-10-05 03:48:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	252K
描述
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

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BF245ARLRE 数据手册

ON Semiconductort

BF245A

BF245B

JFET VHF/UHF Amplifiers

N–Channel — Depletion

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

Value

±30

Unit

Vdc

Drain–Gate Voltage

Gate–Source Voltage

Drain Current

Vdc

BF244A, BF244B

CASE 29–11, STYLE 22

TO–92 (TO–226AA)

100

mAdc

Forward Gate Current

G(f)

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Storage Channel Temperature Range

stg

–65 to +150

°C

3 DRAIN

BF245, BF245A,

BF245B, BF245C

CASE 29–11, STYLE 23

TO–92 (TO–226AA)

GATE

STYLE 22

STYLE 23

1 SOURCE

2 SOURCE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

—

Vdc

(BR)GSS

(I = 1.0 µAdc, V = 0)

Gate–Source

(1)

(V = 15 Vdc, I = 200 µAdc)

BF245

0.4

1.6

3.2

—

7.5

2.2

3.8

7.5

(2)

BF245A, BF244A

BF245B, BF244B

BF245C

Gate–Source Cutoff Voltage

(V = 15 Vdc, I = 10 nAdc)

GS(off)

–ā0.5

—

–ā8.0

Vdc

Gate Reverse Current

(V = 20 Vdc, V = 0)

—

5.0

nAdc

GSS

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

mAdc

DSS

(1)

(V = 15 Vdc, V = 0)

BF245

2.0

6.0

—

6.5

(2)

BF245A, BF244A

BF245B, BF244B

BF245C

1. On orders against the BF245, any or all subgroups might be shipped.

2. On orders against the BF244A, any or all subgroups might be shipped.

Semiconductor Components Industries, LLC, 2001

332

Publication Order Number:

June, 2001 – Rev. 0

BF245A/D

12 3 4 5

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