5秒后页面跳转
BF199_NL PDF预览

BF199_NL

更新时间: 2024-01-19 01:57:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体管
页数 文件大小 规格书
3页 23K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92, LEAD FREE, TO-92, 3 PIN

BF199_NL 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.74
最大集电极电流 (IC):0.05 A基于收集器的最大容量:0.4 pF
集电极-发射极最大电压:25 V配置:SINGLE
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):1100 MHz
Base Number Matches:1

BF199_NL 数据手册

 浏览型号BF199_NL的Datasheet PDF文件第2页浏览型号BF199_NL的Datasheet PDF文件第3页 
BF199  
NPN RF Transistor  
TO-92  
1. Collector 2. Emitter 3. Base  
1
Absolute Maximum Ratings* T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
25  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
40  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
50  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ 150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base BreakdownVoltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 1.0mA, I = 0  
25  
40  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CES  
C
C
E
B
= 100µA, I = 0  
E
= 10µA, I = 0  
4.0  
V
C
I
V
= 30V, I = 0  
50  
nA  
CE  
E
On Characteristics  
h
DC Current Gain  
I
= 7.0mA, V = 10V  
38  
FE  
C
CE  
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
I
= 10mA, I = 5.0mA  
0.2  
0.92  
V
V
V
CE  
BE  
BE  
C
C
C
B
= 10mA, I = 5.0mA  
B
= 7.0mA, V = 10V  
0.925  
CE  
Small Signal Characteristics  
f
Current gain Bandwidth Product  
I
= 7.0mA, V = 10V,  
1100  
0.4  
MHz  
pF  
T
C
CE  
f = 100MHz  
C
Common-Emitter Ruerse  
Transfer Capacitance  
V
CB  
= 10V, I = 0, f = 1.0MHz  
re  
E
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
350  
2.8  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
125  
357  
°C/W  
°C/W  
θJC  
θJA  
©2002 Fairchild Semiconductor Corporation  
Rev. A, September 2002  

与BF199_NL相关器件

型号 品牌 获取价格 描述 数据表
BF199{L34Z} TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199-AMMO NXP

获取价格

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal
BF199D26Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199D27Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199D74Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199D75Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199J05Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199J18Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199L34Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
BF199RL MOTOROLA

获取价格

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN