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BF199ZL1 PDF预览

BF199ZL1

更新时间: 2024-02-15 14:27:04
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 放大器晶体管
页数 文件大小 规格书
24页 333K
描述
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

BF199ZL1 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.74
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.35 pF集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):40
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
功耗环境最大值:1 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):750 MHz
Base Number Matches:1

BF199ZL1 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
3
BASE  
2
EMITTER  
1
2
3
CASE 29–04, STYLE 21  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
25  
Unit  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
40  
4.0  
Vdc  
Collector Current — Continuous  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 1.0 mAdc, I = 0)  
25  
40  
4.0  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
V
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
Vdc  
E
C
Collector Cutoff Current  
(V = 20 Vdc, I = 0)  
I
nAdc  
CBO  
100  
CB  
E
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–231  

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