Datasheet > BDY57_12

BDY57_12

更新时间： 2024-02-17 10:28:59

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	1093K
描述
SILICON TRANSISTORS, DIFFUSED MESA

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中文翻译

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数据手册

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BDY57_12 数据手册

NPN BDY57 – BDY58

SILICON TRANSISTORS, DIFFUSED MESA

The BDY57 and BDY58 are mounted in TO-3 metal package.

LF Large Signal Power Amplification

High Current Fast Switching.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BDY57

BDY58

BDY57

BDY58

125

120

160

V_CEO

V_CBO

Collector-Emitter Voltage

Collector-Base Voltage

V_EBO

I_C

I_B

Emitter-Base Voltage

Collector Current

Base Current

P_TOT

T_{J TS}

Power Dissipation

Junction Temperature Storage Temperature

@ TC = 25°

175

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-C

Thermal Resistance, Junction to Case

°C/W

09/11/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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与BDY57_12相关器件

型号	品牌	获取价格	描述	数据表
BDY58	COMSET	获取价格	NPN SILICON TRANSISTORS, DIFFUSED MESA
BDY58	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDY58	ISC	获取价格	isc Silicon NPN Power Transistor
BDY58	NJSEMI	获取价格	Trans GP BJT NPN 125V 25A 3-Pin(2+Tab) TO-3
BDY58A	SEME-LAB	获取价格	Bipolar NPN Device
BDY58B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 125V V(BR)CEO \| 25A I(C) \| TO-3
BDY58C	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
BDY58R	RENESAS	获取价格	25A, 160V, NPN, Si, POWER TRANSISTOR, TO-204AA
BDY58S	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BDY60	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package