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BDX34B PDF预览

BDX34B

更新时间: 2024-11-23 22:39:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 38K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDX34B 数据手册

 浏览型号BDX34B的Datasheet PDF文件第2页浏览型号BDX34B的Datasheet PDF文件第3页浏览型号BDX34B的Datasheet PDF文件第4页 
BDX33B BDX33C  
BDX34B BDX34C  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
DESCRIPTION  
The BDX33B and BDX33C are silicon  
Epitaxial-Base NPN power transistors in  
monolithic Darlington configuration mounted in  
Jedec TO-220 plastic package. They are intented  
for use in power linear and switching applications.  
The complementary PNP types are BDX34B and  
BDX34C respectively.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 10 KΩ  
R2 Typ. = 150 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Unit  
NPN  
PNP  
BDX33B  
BDX34B  
80  
BDX33C  
BDX34C  
100  
VCBO  
VCEO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Collector Current  
V
V
80  
100  
10  
A
ICM  
IB  
Collector Peak Current  
Base Current  
15  
0.25  
A
A
o
Ptot  
Tstg  
Tj  
70  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
October 1999  

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