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BDX34BA

更新时间: 2024-11-24 13:05:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
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6页 138K
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BDX34BA 数据手册

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Order this document  
by BDX33B/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general purpose and low speed switching applications.  
High DC Current Gain — h = 2500 (typ.) at I = 4.0  
FE C  
Collector–Emitter Sustaining Voltage at 100 mAdc  
V
V
= 80 Vdc (min.) — BDX33B, 34B  
= 100 Vdc (min.) — BDX33C, 34C  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage  
= 2.5 Vdc (max.) at I = 3.0 Adc — BDX33B, 33C/34B, 34C  
Monolithic Construction with Build–In Base–Emitter Shunt resistors  
TO–220AB Compact Package  
*Motorola Preferred Device  
V
CE(sat)  
C
DARLINGTON  
10 AMPERE  
COMPLEMENTARY  
SILICON  
MAXIMUM RATINGS  
POWER TRANSISTORS  
80100 VOLTS  
70 WATTS  
BDX33B  
BDX34B  
BDX33C  
BDX34C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
10  
15  
Base Current  
I
B
0.25  
Adc  
Total Device Dissipation  
P
D
@ T = 25 C  
70  
0.56  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.78  
C/W  
θJC  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
C)  
140  
160  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

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