Datasheet > BDT32F

BDT32F

更新时间： 2024-01-07 10:50:56

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	118K
描述
isc Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BDT32F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT32F/AF/BF/CF/DF

DESCRIPTION

·DC Current Gain -h_FE= 25(Min)@ I_C= -1.0A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -40V(Min)- BDT32F; -60V(Min)- BDT32AF

-80V(Min)- BDT32BF; -100V(Min)- BDT32CF

-120V(Min)- BDT32DF

·Complement to Type BDT31F/AF/BF/CF/DF

APPLICATIONS

·Designed for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-80

UNIT

BDT32F

BDT32AF

BDT32BF

BDT32CF

BDT32DF

BDT32F

-100

-120

-140

-160

-40

Collector-Base

Voltage

V_CBO

BDT32AF

BDT32BF

BDT32CF

BDT32DF

-60

Collector-Emitter

Voltage

V_CEO

-80

-100

-120

-5

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

-3

-5

-1

Collector Power Dissipation

T_C=25℃

P_C

T_j

Junction Temperature

150

℃

Storage Ttemperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

8.12

℃/W

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与BDT32F相关器件

型号	品牌	获取价格	描述	数据表
BDT-401H	DBLECTRO	获取价格	BDT-401H
BDT-402H	DBLECTRO	获取价格	BDT-401H
BDT-403H	DBLECTRO	获取价格	BDT-401H
BDT-404H	DBLECTRO	获取价格	BDT-401H
BDT41	ISC	获取价格	isc Silicon NPN Power Transistors
BDT41	NJSEMI	获取价格	Trans GP BJT NPN 40V 6A
BDT41A	ISC	获取价格	isc Silicon NPN Power Transistors
BDT41A	NJSEMI	获取价格	Trans GP BJT NPN 60V 6A
BDT41AF	ISC	获取价格	isc Silicon NPN Power Transistors
BDT41AF	NJSEMI	获取价格	Trans GP BJT NPN 60V 6A