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BDB01 PDF预览

BDB01

更新时间: 2024-11-13 22:27:27
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体放大器晶体管
页数 文件大小 规格书
4页 135K
描述
One Watt Amplifier Transistors

BDB01 数据手册

 浏览型号BDB01的Datasheet PDF文件第2页浏览型号BDB01的Datasheet PDF文件第3页浏览型号BDB01的Datasheet PDF文件第4页 
Order this document  
by BDB01C/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
2
3
1
EMITTER  
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
MAXIMUM RATINGS  
Rating  
Symbol  
BDB01C  
BDB01D  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
80  
80  
V
100  
CES  
EBO  
V
5.0  
0.5  
Collector Current — Continuous  
I
C
Total Device Dissipation  
P
1.0  
8.0  
Watt  
mW/°C  
D
D
@ T = 25°C  
A
Derate above 25°C  
Total Device Dissipation  
P
2.5  
20  
Watt  
mW/°C  
@ T = 25°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Voltage  
V
Vdc  
(BR)CEO  
(I = 10 mA, I = 0)  
BDB01C  
BDB01D  
80  
100  
C
B
Collector Cutoff Current  
I
Adc  
CBO  
(V  
CB  
(V  
CB  
= 80 V, I = 0)  
BDB01C  
BDB01D  
0.01  
0.01  
E
= 100 V, I = 0)  
E
Emitter Cutoff Current  
(I = 0, V = 5.0 V)  
I
100  
nAdc  
EBO  
C
EB  
Motorola, Inc. 1996  

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