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BDB01CRL1 PDF预览

BDB01CRL1

更新时间: 2024-09-27 03:15:39
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
23页 332K
描述
TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN, BIP General Purpose Small Signal

BDB01CRL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:PLASTIC, TO-226AE, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.62其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz

BDB01CRL1 数据手册

 浏览型号BDB01CRL1的Datasheet PDF文件第2页浏览型号BDB01CRL1的Datasheet PDF文件第3页浏览型号BDB01CRL1的Datasheet PDF文件第4页浏览型号BDB01CRL1的Datasheet PDF文件第5页浏览型号BDB01CRL1的Datasheet PDF文件第6页浏览型号BDB01CRL1的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
2
3
1
EMITTER  
CASE 29–05, STYLE 1  
TO–92 (TO–226AE)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
V
CEO  
80  
80  
Vdc  
Vdc  
Vdc  
Adc  
V
CES  
EBO  
V
5.0  
0.5  
Collector Current — Continuous  
I
C
Total Device Dissipation  
P
1.0  
8.0  
Watt  
mW/°C  
D
D
@ T = 25°C  
A
Derate above 25°C  
Total Device Dissipation  
P
2.5  
20  
Watt  
mW/°C  
@ T = 25°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Voltage  
V
Vdc  
Adc  
(BR)CEO  
(I = 10 mA, I = 0)  
80  
C
B
Collector Cutoff Current  
(V = 80 V, I = 0)  
I
CBO  
0.01  
100  
CB  
Emitter Cutoff Current  
(I = 0, V = 5.0 V)  
E
I
nAdc  
EBO  
C
EB  
REV 1  
2–222  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  

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