生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.77 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 90 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1.5 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD807W | MOTOROLA |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
BD807WD | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BD808 | ISC |
获取价格 |
Silicon PNP Power Transistor | |
BD808 | MOTOROLA |
获取价格 |
Plastic High Power Silicon PNP Transistor | |
BD808 | NJSEMI |
获取价格 |
Trans GP BJT PNP 60V 10A 3-Pin(3+Tab) TO-220 | |
BD808/D | ETC |
获取价格 |
Plastic High Power Silicon PNP Transistor | |
BD80816 | MOTOROLA |
获取价格 |
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
BD80816A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
BD8083A | BULGIN |
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BD8083A是一款输出耐压可达42V,7-32V输入电压条件正常工作,并且能够实现精确恒 | |
BD808A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |