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BD808BS PDF预览

BD808BS

更新时间: 2024-12-02 04:02:39
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管
页数 文件大小 规格书
59页 347K
描述
10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BD808BS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1.5 MHz
Base Number Matches:1

BD808BS 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
10 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
. . . designed for use in high power audio amplifiers utilizing complementary or quasi  
complementary circuits.  
DC Current Gain — h = 30 (Min) @ I = 2.0 Adc  
FE C  
BD 808, 810 are complementary with BD 807, 890  
60, 80 VOLTS  
90 WATTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Type  
Value  
Unit  
Collector–Emitter Voltage  
V
V
V
BD808  
BD810  
60  
80  
Vdc  
CEO  
CBO  
EBO  
Collector–Base Voltage  
BD808  
BD810  
70  
80  
Vdc  
Emitter–Base Voltage  
Collector Current  
Base Current  
5.0  
10  
Vdc  
Adc  
Adc  
I
C
I
B
6.0  
Total Device Dissipation T = 25 C  
C
Derate above 25 C  
P
D
90  
720  
Watts  
mW/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
CASE 221A–06  
TO–220AB  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.39  
C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Type  
Min  
Max  
Unit  
Collector–Emitter Sustaining Voltage*  
BV  
BD808  
BD810  
60  
80  
Vdc  
CEO  
(I = 0.1 Adc, I = 0)  
C
B
Collector Cutoff Current  
I
mAdc  
mAdc  
CBO  
(V  
CB  
(V  
CB  
= 70 Vdc, I = 0)  
E
BD808  
BD810  
1.0  
1.0  
= 80 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
I
2.0  
EBO  
BE  
C
DC Current Gain  
(I = 2.0 A, V  
(I = 4.0 A, V  
C
h
FE  
= 2.0 V)  
CE  
= 2.0 V)  
CE  
30  
15  
C
Collector–Emitter Saturation Voltage*  
(I = 3.0 Adc, I = 0.3 Adc)  
V
1.1  
1.6  
Vdc  
Vdc  
MHz  
CE(sat)  
C
B
Base–Emitter On Voltage*  
(I = 4.0 Adc, V = 2.0 Vdc)  
V
BE(on)  
C
CE  
Current–Gain Bandwidth Product  
f
T
1.5  
(I = 1.0 Adc, V  
C CE  
= 10 Vdc, f = 1.0 MHz)  
* Pulse Test: Pulse Width  
300 µs, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
3–206  
Motorola Bipolar Power Transistor Device Data  

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