Datasheet > BD808/D

BD808/D

更新时间： 2024-11-03 23:35:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	48K
描述
Plastic High Power Silicon PNP Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD808/D 数据手册

BD808

BD810

Plastic High Power Silicon

PNP Transistor

*ON Semiconductor Preferred Device

. . . designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

10 AMPERE

POWER TRANSISTORS

PNP SILICON

• DC Current Gain —

= 30 (Min) @ I

60, 80 VOLTS

= 2.0 Adc

90 WATTS

• BD 808, 810 are complementary with BD 807, 890

MAXIMUM RATINGS

Rating

Symbol

Type

Value

Unit

Collector–Emitter Voltage

BD808

BD810

Vdc

CEO

CBO

EBO

Collector–Base Voltage

BD808

BD810

Vdc

Emitter–Base Voltage

Collector Current

Base Current

5.0

Vdc

Adc

6.0

Total Device Dissipation T = 25_C

720

Watts

mW/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

CASE 221A–06

TO–220AB

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.39

_C/W

ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

Characteristic

Symbol

Type

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

BD808

BD810

—

Vdc

CEO

(I = 0.1 Adc, I = 0)

Collector Cutoff Current

(V = 70 Vdc, I = 0)

mAdc

CBO

BD808

BD810

—

1.0

(V = 80 Vdc, I = 0)

Emitter Cutoff Current

—

2.0

EBO

(V = 5.0 Vdc, I = 0)

DC Current Gain

(I = 2.0 A, V = 2.0 V)

—

(I = 4.0 A, V = 2.0 V)

Collector–Emitter Saturation Voltage*

(I = 3.0 Adc, I = 0.3 Adc)

—

1.1

1.6

—

Vdc

MHz

CE(sat)

Base–Emitter On Voltage*

(I = 4.0 Adc, V = 2.0 Vdc)

BE(on)

—

Current–Gain Bandwidth Product

(I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz)

1.5

*Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

January, 2001 – Rev. 8

BD808/D

12 3 4

中文翻译

下载PDF

与BD808/D相关器件

型号	品牌	获取价格	描述	数据表
BD80816	MOTOROLA	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD80816A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD8083A	BULGIN	获取价格	BD8083A是一款输出耐压可达42V，7-32V输入电压条件正常工作，并且能够实现精确恒
BD808A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD808AF	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD808AF	ONSEMI	获取价格	TRANSISTOR 10 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
BD808AJ	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD808AK	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD808AN	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD808AS	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN