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BD790

更新时间: 2022-11-29 18:32:08
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 179K
描述
Complementary Plastic Silicon Power Transistors

BD790 数据手册

 浏览型号BD790的Datasheet PDF文件第1页浏览型号BD790的Datasheet PDF文件第2页浏览型号BD790的Datasheet PDF文件第4页浏览型号BD790的Datasheet PDF文件第5页浏览型号BD790的Datasheet PDF文件第6页 
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
0.1  
0.05  
P
(pk)  
0.1  
0.07  
0.05  
R
R
= r(t) R  
θ
θ
θ
JC(t)  
= 8.34  
JC  
C/W MAX  
°
JC  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t  
0.02  
0.01  
t
1
0.03  
0.02  
t
2
1
(pk)  
0 (SINGLE PULSE)  
T
– T = P  
R
J(pk)  
C
θ
JC(t)  
100  
DUTY CYCLE, D = t /t  
1 2  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
t, TIME (ms)  
5.0  
10  
20  
50  
200  
Figure 4. Thermal Response  
10  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
100  
500  
µs  
5.0  
1.0 ms  
µs  
2.0  
down. Safe operating area curves indicate I – V  
limits of  
C
CE  
dc  
the transistor that must be observed for reliable operation,  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
1.0  
0.5  
T
= 150°C  
J
5.0 ms  
BONDING WIRE LIMITED  
THERMALLY LIMITED @ T = 25°C  
C
(SINGLE PULSE)  
The data of Figure 5 is based on T  
= 150 C: T is  
C
J(pk)  
variable depending on conditions. Second breakdown pulse  
limits are valid for duty cycles to 10% provided T  
0.1  
0.05  
J(pk)  
may be calculated from the data in Fig-  
SECOND BREAKDOWN LIMITED  
150 C, T  
J(pk)  
CURVES APPLY BELOW RATED V  
CEO  
ure 4. At high case temperatures, thermal limitations will re-  
duce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
BD789 (NPN) BD790 (PNP)  
BD791 (NPN) BD792 (PNP)  
0.02  
0.01  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Active Region Safe Operating Area  
2000  
1000  
200  
T
= 25°C  
T
= 25°C  
J
J
V
I
= 30 V  
/I = 10  
CC  
100  
700  
500  
C B  
B1 B2  
C
ib  
I
= I  
t
s
70  
50  
300  
200  
100  
70  
50  
C
30  
20  
ob  
t
f
BD789, 791 (NPN)  
BD790, 792 (PNP)  
BD789, 791 (NPN)  
BD790, 792 (PNP)  
30  
20  
10  
1.0  
2.0  
3.0  
5.0 7.0  
10 20  
30  
50 70 100  
0.04 0.06  
0.1  
0.2  
0.4  
0.6  
1.0  
2.0  
4.0  
V
, REVERSE VOLTAGE (VOLTS)  
R
I
, COLLECTOR CURRENT (AMP)  
C
Figure 7. Capacitance  
Figure 6. Turn–Off Time  
3
Motorola Bipolar Power Transistor Device Data  

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