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BD790

更新时间： 2022-11-29 18:32:08

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	179K
描述
Complementary Plastic Silicon Power Transistors

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BD790 数据手册

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*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

C

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

V

Vdc

CEO(sus)

(I = 10 mAdc, I = 0)

BD789, BD790

BD791, BD792

80

100

—

—

C

B

Collector Cutoff Current

I

µAdc

CEO

(V

CE

(V

CE

= 40 Vdc, I = 0)

BD789, BD790

BD791, BD792

—

—

100

100

B

= 50 Vdc, I = 0)

B

Collector Cutoff Current

I

CEX

(V

CE

(V

CE

(V

CE

(V

CE

= 80 Vdc, V

= 100 Vdc, V

= 1.5 Vdc)

= 1.5 Vdc)

= 1 5 Vdc, T = 125 C)

BD789, BD790

BD791, BD792

BD789, BD790

BD791, BD792

—

—

—

—

1.0

1.0

0.1

0.1

µAdc

BE(off)

BE(off)

= 40 Vdc, V

= 50 Vdc, V

BE(off)

BE(off)

C

mAdc

= 1.5 Vdc, T = 125 C)

C

Emitter Cutoff Current (V

EB

= 6.0 Vdc, I = 0)

I

—

1.0

µAdc

C

EBO

ON CHARACTERISTICS (1)

DC Current Gain

h

FE

—

(I = 200 mAdc, V

= 3 0 Vdc)

= 3.0 Vdc)

= 3.0 Vdc)

= 3.0 Vdc)

40

20

10

5.0

250

—

—

C

CE

(I = 1.0 Adc, V

C

CE

CE

CE

(I = 2.0 Adc, V

C

(I = 4.0 Adc, V

C

—

Collector Emitter Saturation Voltage

(I = 500 mAdc, I = 50 mAdc)

V

Vdc

CE(sat)

—

—

—

—

0.5

1.0

2.5

3.0

C

B

(I = 1.0 Adc, I = 100 mAdc)

C

C

B

B

B

(I = 2.0 Adc, I = 200 mAdc)

(I = 4.0 Adc, I = 800 mAdc)

C

Base–Emitter Saturation Voltage (I = 2.0 Adc, I = 200 mAdc)

V

—

—

1.8

1.5

Vdc

Vdc

C

B

BE(sat)

Base–Emitter On Voltage (I = 200 mAdc, V

C

= 3.0 Vdc)

V

BE(on)

CE

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

f

40

—

MHz

pF

T

(I = 100 mAdc, V

C

= 10 Vdc, f = 10 MHz)

CE

Output Capacitance

C

ob

(V

CB

= 10 Vdc, I = 0, f = 0.1 MHz)

BD789, BD791

BD790, BD792

—

—

50

70

C

Small–Signal Current Gain

(I = 200 mAdc, V = 10 Vdc, f = 1.0 kHz)

h

fe

10

—

—

C

CE

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle

2.0%.

500

+ 30 V

V

CC

300

200

T

V

= 25°C

J

25 µs

R

= 30 V

C

CC

/I = 10

+ 11 V

0

I

C B

SCOPE

100

R

B

70

50

– 9.0 V

t , t 10 ns

51

D

1

t

r

30

20

r

f

DUTY CYCLE = 1.0%

t

@ V

BE(off)

= 5.0 V

– 4 V

d

R

AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS

B

C

BD789, 791 (NPN)

BD790, 792 (PNP)

10

D

MUST BE FAST RECOVERY TYPE, eg

1

7.0

MBR340 USED ABOVE I

100 mA

100 mA

B

5.0

0.04

MSD6100 USED BELOW I

0.06 0.1

0.2

0.4 0.6

1.0

2.0

4.0

B

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

I

, COLLECTOR CURRENT (AMP)

C

Figure 2. Switching Time Test Circuit

Figure 3. Turn–On Time

Motorola Bipolar Power Transistor Device Data

2

123 4 5 6

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