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BD4211FV-E2

更新时间： 2024-02-15 02:57:22
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管
页数 文件大小 规格书
17页 1214K
描述
Switching Regulator, PDSO8, ROHS COMPLIANT, SSOP-8

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BD4211FV-E2 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：ROHS COMPLIANT, SSOP-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.76
Is Samacsys：N模拟集成电路 - 其他类型：SWITCHING REGULATOR
最大输入电压：6 V最小输入电压：2.5 V
标称输入电压：5 VJESD-30 代码：R-PDSO-G8
JESD-609代码：e2长度：4.4 mm
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-35 °C
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装等效代码：TSSOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V认证状态：Not Qualified
座面最大高度：1.25 mm子类别：Power Management Circuits
最大供电电流 (Isup)：60 mA标称供电电压 (Vsup)：5 V
表面贴装：YES温度等级：OTHER
端子面层：Tin/Copper (Sn/Cu)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3 mm
Base Number Matches：1

BD4211FV-E2 数据手册

 浏览型号BD4211FV-E2的Datasheet PDF文件第11页浏览型号BD4211FV-E2的Datasheet PDF文件第12页浏览型号BD4211FV-E2的Datasheet PDF文件第13页浏览型号BD4211FV-E2的Datasheet PDF文件第15页浏览型号BD4211FV-E2的Datasheet PDF文件第16页浏览型号BD4211FV-E2的Datasheet PDF文件第17页 
zOperation Notes  
1.  
Absolute maximum ratings  
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break  
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated  
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.  
2.  
GND potential  
Ground-GND potential should maintain at the minimum ground voltage level. Furthermore, no terminals should be lower  
than the GND potential voltage including an electric transient.  
3.  
4.  
Thermal design  
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.  
Inter-pin shorts and mounting errors  
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any  
connection error or if positive and ground power supply terminals are reversed. The IC may also be damaged if pins are  
shorted together or are shorted to other circuit’s power lines.  
5.  
6.  
Common impedance  
The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage on  
the power ground line may damage the device.  
Regarding input pin of the IC (Fig.32)  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements to keep them isolated. P–N  
junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or  
transistor. For example, the relation between each potential is as follows:  
When GND > Pin A and GND > Pin B, the P–N junction operates as a parasitic diode.  
When Pin B > GND > Pin A, the P–N junction operates as a parasitic transistor.  
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes  
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be  
used.  
Transistor (NPN)  
Resistor  
B
（pin A）  
（pin B）  
E
C
GND  
N
P＋  
P＋  
P
P
P＋  
P＋  
N
N
N
N
N
Ｎ
P substrate  
GND  
P substrate  
GND  
Parasitic element  
Parasitic element  
（pin B）  
（pinＡ）  
C
B
E
Parasitic element  
GND  
Parasitic element  
Other adjacent element  
GND  
Fig.32 Example of Bip. IC easy structure  
14/16  
1...11121314151617

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