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BD4233NUX PDF预览

BD4233NUX

更新时间: 2024-11-13 11:16:11
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
29页 1834K
描述
BD4233NUX is Strobe Charge Control IC, ideal for Digital still cameras, Mobile Phone. The strobe charge IC is a self-oscillating switching regulator that uses a transformer. It provides highly efficient applications for charging capacitors in sets with various strobes.

BD4233NUX 数据手册

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Power LSI series for Digital Camera and Digital Video Camera  
Strobe Charge Control IC  
BD4233NUX  
Outline  
The strobe charge IC is a self-oscillating switching  
Key Specifications  
SW pin input range:  
48V  
0.5A±20%  
1.0V±1.1%  
SW pin peak current:  
Full charge detection voltage DC:  
Full charge detection voltage AC 200nsec:1.0V-1.1%~1.35%  
Full charge detection voltage AC 100nsec: 1.0V-1.1%~1.6%  
regulator that uses a transformer. It provides highly  
efficient applications for charging capacitors in sets with  
various strobes.  
Vth(START,IGBT_AN)  
0.6V~1.5V  
Features  
1) Built-in lowVth48V DMOS  
2) Adjustable transformer primary-side peak current  
by RADJ pin  
3) Charging control switching with the START pin  
4) Includes high precision full charge voltage  
detection circuit and output pin  
5) Various built-in protective circuits (TSD, UVLO,  
SDP)  
6) Built-in IGBT driver  
Package  
3.0mm×2.0mm×0.6mm VSON010X3020  
Use  
Digital still camerasMobile Phone  
Recommended Application Circuit  
RFU02VS8SROHM)  
S
P
Battery  
Cmain  
80μF  
300V  
VCC  
22μF  
4.7μF  
VCC  
VCC  
SW  
5
10  
Controller  
VCC  
STB  
OSC  
TSD  
UVLO  
VREF  
UVLO  
OSC  
TSD  
IGBT  
Xenon  
OS  
START  
ENABLE  
6
START  
S Q  
VCC  
R
FULL  
SDP  
LOGIC  
STB  
Q
STB  
UVLO  
TSD  
DRIVER  
PGND  
MAX ON  
OFF  
OSC  
S Q  
R
CLK  
R
MAX OFF  
OFF  
ON  
TSD  
UVLO  
SDP  
+
-
ON  
PGND  
SDP  
RFB1=470kΩ  
1
RADJ  
8
9
7
I/V  
47kΩ  
VC  
FULL  
4
+
-
Q
S
R
(
)
RFB2=1.62kΩ  
+
-
OS  
FULL  
GND  
OFF  
3
2
VCC  
STB  
68Ω  
IGBT_OUT  
IGBT_IN  
IGBT_IN  
IGBT  
10kΩ  
IGBT  
CY25BAH-8F  
ルネサスꢀテクノロジ  
Fig.1 Application circuit  
ProductsSilicon monolithic IC This product is not designed for normal operation with in a radioactive  
Status of this document  
The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version.  
If these are any uncertainty in translation version of this document, official version takes priority.  
www.rohm.com  
TSZ02201-0Q2Q0J400010-1-2  
11.Sep.2013 Rev.003  
© 2011 ROHM Co., Ltd. All rights reserved.  
1
TSZ2211114001  

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