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BD4220AMUV PDF预览

BD4220AMUV

更新时间: 2024-11-12 06:41:51
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
5页 190K
描述
Silicon monolithic integrated circuit

BD4220AMUV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN, LCC16,.12SQ,20针数:16
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.6模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:S-XQCC-N16JESD-609代码:e2
长度:3 mm功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-35 °C封装主体材料:UNSPECIFIED
封装代码:HVQCCN封装等效代码:LCC16,.12SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:1 mm
子类别:Power Management Circuits最大供电电流 (Isup):2.5 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
温度等级:OTHER端子面层:Tin/Copper (Sn/Cu)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

BD4220AMUV 数据手册

 浏览型号BD4220AMUV的Datasheet PDF文件第2页浏览型号BD4220AMUV的Datasheet PDF文件第3页浏览型号BD4220AMUV的Datasheet PDF文件第4页浏览型号BD4220AMUV的Datasheet PDF文件第5页 
1/4  
S t r u c t u r e  
P r o d u c t n a m e  
Silicon monolithic integrated circuit  
Strobe capacitor charging control IC  
M o d e l  
N o .  
BD4220AMUV  
1. Built-in power transistor(50V DMOS)  
F e a t u r e s  
2. Adjustable transformer primary-side peak current to linear current with the ADJ pin  
3. Charging control switching with the START pin  
4. Includes high precision full charge voltage detection circuit and output pin  
5. Various built-in protective circuits (TSD, UVLO)  
6. Built-in protective circuits (SDP)  
7. Built-in IGBT driver(VDD supply for IGBT driver)  
8. Employs small package: VQFN016V3030 (3.0 mm×3.0 mm×1.0 mm)  
○ Absolute Maximum Ratings(Ta=25℃)  
Parameter  
VCC supply voltage  
Symbol  
VCC  
VDD  
VSW  
VCDC  
VI  
Rating  
-0.3~7  
-0.3~7  
50  
Unit  
V
VDD supply voltage  
V
SW pin  
V
-15~50  
-0.3~7  
-35~+85  
-55~+150  
150  
V
VC pin (DC characteristic)  
Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN)  
Operating temperature range  
Storage temperature range  
Junction temperature  
V
°C  
Topr  
Tstg  
Tjmax  
Pd  
°C  
°C  
Power dissipation  
1770 *1  
mW  
○ Operating Conditions(Ta=25)  
Parameter  
Symbol  
VCC  
VDD  
Rating  
2.5~5.5  
2.5~5.5  
0~VCC  
0~5.5  
Unit  
V
VCC supply voltage range  
VDD supply voltage range  
V
Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN)  
FULL pin input current range  
VI  
V
VFULL  
V
*1: Reduced by 14.16 mW/°C at Ta=25°C or more (When mounted on a 74.2 mm×74.2 mm×1.6 mm glass epoxy, 4-layer board:  
Surface radiating copper foil of 6.28mm2, copper foil laminated in each layer)  
Outside marking and dimension (UNIT:mm)  
B 4
 
2  
2
A
0
LOT No.  
Fig.1 Outside marking and dimension  
Notes on this document  
The Japanese version of this document is the formal specifications. The translated version of the document should be used for reference.  
If there is any difference between the formal specifications and the translated version, the formal specifications shall take priority.  
REV. A  

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