Datasheet > BD42530EFJ-C

BD42530EFJ-C

更新时间： 2023-09-03 20:25:09

品牌	Logo	应用领域
罗姆 - ROHM		电池过电流保护电容器陶瓷电容器
页数	文件大小	规格书
30页	1491K
描述
BD42530EFJ-C是45V耐压、偏置电压 ±10mV、输出电流250mA、消耗电流40µA的低待机电流电压跟踪器。本IC适合用来降低蓄电池直连系统的消耗电流。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。We recommend BD42530UEFJ-C for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.

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BD42530EFJ-C 数据手册

Datasheet

Voltage Tracker

250 mA Output Voltage Tracker

BD42530xxx-C Series

General Description

Features

■ AEC-Q100 Qualified ^{(Note 1)}

The BD42530xxx-C Series are voltage trackers featuring

45 V absolute maximum voltage, output voltage tracking

accuracy of ±10 mV, 250 mA output current and 40 µA

(Typ) low current consumption.

These trackers are therefore ideal for applications

requiring a direct connection to the battery and a low

current consumption.

Ceramic capacitors can be used for phase compensation

capacitor of the output. Furthermore, these ICs also

feature overcurrent protection to protect the device from

damage caused by short-circuiting and an integrated

thermal shutdown to protect the device from overheating

at overload conditions.

■ Qualified for Automotive Applications

■ Wide Temperature Range (Tj):

■ Wide Operating Input Range:

■ Low Quiescent Current:

■ Output Voltage Tracking Accuracy:

■ Over Current Protection (OCP)

■ Thermal Shutdown Protection (TSD)

(Note 1: Grade 1)

-40 °C to +150 °C

3 V to 42 V

40 µA (Typ)

±10 mV

Packages

■ EFJ：HTSOP-J8

W (Typ) x D (Typ) x H (Max)

4.90 mm x 6.00 mm x 1.00 mm

■ FPJ：TO252-J5

6.60 mm x 10.10 mm x 2.38 mm

■ FP2：TO263-5

10.16 mm x 15.10 mm x 4.70 mm

Applications

■ Automotive

(Engine-ECU, Body, Air-Conditioner etc.)

Typical Application Circuits

■ Components externally connected: 1 µF ≤ C_IN(Min), 4.7 µF ≤ C_O(Min)

Ceramic capacitors with less change in ESR due to temperature characteristics are recommended.

VCC

N.C.

GND

ADJ

/ EN

C_IN

BD42530EFJ-C

N.C.

C_O

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

.www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0G7G0AN00550-1-2

08.Nov.2021 Rev.004

1/27

12 3 4 5 6 7...30

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