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BD42530EFJ-C PDF预览

BD42530EFJ-C

更新时间: 2024-11-13 11:08:19
品牌 Logo 应用领域
罗姆 - ROHM 电池过电流保护电容器陶瓷电容器
页数 文件大小 规格书
30页 1491K
描述
BD42530EFJ-C是45V耐压、偏置电压 ±10mV、输出电流250mA、消耗电流40µA的低待机电流电压跟踪器。本IC适合用来降低蓄电池直连系统的消耗电流。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。We recommend BD42530UEFJ-C for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.

BD42530EFJ-C 数据手册

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Datasheet  
Voltage Tracker  
250 mA Output Voltage Tracker  
BD42530xxx-C Series  
General Description  
Features  
AEC-Q100 Qualified (Note 1)  
The BD42530xxx-C Series are voltage trackers featuring  
45 V absolute maximum voltage, output voltage tracking  
accuracy of ±10 mV, 250 mA output current and 40 µA  
(Typ) low current consumption.  
These trackers are therefore ideal for applications  
requiring a direct connection to the battery and a low  
current consumption.  
Ceramic capacitors can be used for phase compensation  
capacitor of the output. Furthermore, these ICs also  
feature overcurrent protection to protect the device from  
damage caused by short-circuiting and an integrated  
thermal shutdown to protect the device from overheating  
at overload conditions.  
Qualified for Automotive Applications  
Wide Temperature Range (Tj):  
Wide Operating Input Range:  
Low Quiescent Current:  
Output Voltage Tracking Accuracy:  
Over Current Protection (OCP)  
Thermal Shutdown Protection (TSD)  
(Note 1: Grade 1)  
-40 °C to +150 °C  
3 V to 42 V  
40 µA (Typ)  
±10 mV  
Packages  
EFJHTSOP-J8  
W (Typ) x D (Typ) x H (Max)  
4.90 mm x 6.00 mm x 1.00 mm  
FPJTO252-J5  
6.60 mm x 10.10 mm x 2.38 mm  
FP2TO263-5  
10.16 mm x 15.10 mm x 4.70 mm  
Applications  
Automotive  
(Engine-ECU, Body, Air-Conditioner etc.)  
Typical Application Circuits  
Components externally connected: 1 µF ≤ CIN (Min), 4.7 µF ≤ CO (Min)  
Ceramic capacitors with less change in ESR due to temperature characteristics are recommended.  
VCC  
N.C.  
GND  
ADJ  
/ EN  
CIN  
BD42530EFJ-C  
VO  
N.C.  
N.C.  
N.C.  
CO  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
.www.rohm.com  
© 2016 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0G7G0AN00550-1-2  
08.Nov.2021 Rev.004  
1/27  

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